| PART |
Description |
Maker |
| 5962-8672301RC 5962-8672302RA 5962-86723012C |
Single 8-bit Bus Transceiver
NiCd/NiMH Battery Fast-Charge Controllers
Low-Noise, 4 1/2 Digit, Single-Chip ADC with Multiplexed LCD Drivers 位总线收发
|
Glenair, Inc.
|
| MAX7129 ICL7129A |
Low-Noise, 4 1/2 Digit, Single-Chip ADC with Multiplexed LCD Drivers
|
MAXIM - Dallas Semiconductor
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 6TR60 15TD30 15TR13 15TR35 12TD30 12TR40 28TR23 28 |
Low-Noise, 4 1/2 Digit, Single-Chip ADC with Multiplexed LCD Drivers
Analog IC 模拟IC
5-Pin, Multiple-Input, Programmable Reset ICs 模拟IC
|
3M Company
Microchip Technology, Inc.
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode
50ns 1M x 16bit CMOS dynamic ram with EDO page mode
60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
| FM3560M20 FM3560MT20 FM3540CM14 FM3540CMT14 FM3540 |
4/5-Bit Multiplexed 1-Bit Latched Port with Standard 2-Wire Bus Interface & Non-Volatile Latches
4/5 Bit Multiplexed,1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches
4/5 Bit Multiplexed/ 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches
4/5 Bit Multiplexed, 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches
From old datasheet system
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4 |
RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58
RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| S75NS128N |
Burst-mode Multiplexed Flash
|
SPANSION
|
| S29NS-N S29NS064N0SBJW000 S29NS128N0SBJW003 S29NS0 |
Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA48
|
Spansion Inc.
Spansion, Inc.
|
